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HIVE INF
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ARCHIVE INFORMATION
MRF19125R3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100 120 140 160 180 200
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2
for MTTF in a particular application.
108
107
MTTF FACTOR (HOURS X AMPS
2
)
90 110 130 150 170 190
109
Pout, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
12
12.5
13
13.5
14
10 150100
4
Figure 9. Two-Tone Power Gain versus
Output Power
Figure 10. Two-Tone Broadband Performance
10
15
20
25
30
35
40
?35
?30
?25
?20
?15
?10
?5
1920 1930 1940 1950 1960 1970 1980 1990 2000
IDQ
= 1700 mA
1500 mA
900 mA
G
ps
, POWER GAIN (dB),
, DRAIN EFFICIENCY (%)
η
η
IMD
INTERMODULATION DISTORTION (dBc)
IMD,
f, FREQUENCY (MHz)
INPUT RETURN LOSS (dB)
IRL,
IRL
Gps
DQ
= 1300 mA
100 kHz Tone Spacing
I
Figure 11. Intermodulation Distortion Products
versus Two-Tone Tone Spacing
?25
100 1000 5000
f, TONE SPACING (kHz)
?30
?35
?40
?45
?50
?55
INTERMODULATION DISTORTION (dBc)
IMD,
VDD
= 26 Vdc
IDQ
= 1300 mA
f = 1960 MHz
VDD
= 26 Vdc
Pout
= 125 W (PEP)
1300 mA
1100 mA
VDD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
7th Order
5th Order
3rd Order
Figure 12. MTTF Factor versus Junction Temperature
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